Semiconductor Industry
SS303 Series Cu Plating Solution
The Cu SS303 Series acid copper plating formulation provides excellent throwing power, deposition, physical and chemical characteristics. Cu SS303 Series is a two-component additive, which is very stable in acidic environments. With a tunable oriented nano-grain structure, Cu SS303 Series can be used as nano-Cu glue to achieve copper-to-copper bonding through the growth of grains at the bonding interface. Cu SS303 series can achieve bonding at temperatures as low as 100°C and within 30 minutes, ensuring high mechanical strength and low contact resistance.
Advantages
• Suitable for Cu-to-Cu bonding
•Low contact resistance
•Tunable recrystallization rate
•Bright deposit
•Ability to plate at high current •densities
•Completely analyzable additive package by CVS
SS313 Series Cu Plating Solution
The SS313 series acid copper electroplating formulation is an upgraded product based on SS303. By introducing nanotwin structure into the nanograin, the recrystallization rate at room temperature is significantly reduced, achieving a Q-time of over 20 days. Meanwhile, the activity of the nanograin enables this series to achieve low-temperature copper-to-copper bonding within 30 minutes at 200°C. The balance between bonding temperature and Q-time meets the process requirements of more packaging and testing facilities.
Advantages:
• Ultra-long quality time
• Applicable to copper-to-copper bonding
• Low contact resistance
SS323 Series Cu Plating Solution
The Cu SS323 Series acid copper plating formulation provides excellent throwing power, deposition, physical and chemical characteristics with hybrid twin Cu structure. The Cu SS323 Series deposit has excellent thermal resistance and electrical conductivity. Cu SS323 Series is a two-component additive, which is very stable in acidic environments. The Cu SS323 Series is specifically engineered for wafer plating applications including interconnects, RDL (line/space down to 2μm), via, and pillar filling etc.. By modifying the operating parameters, the Cu SS323 Series may be used for wafer plating applications including copper bump or post plating at higher current densities. These products are formulated, packaged, and quality-controlled according to the needs of the semiconductor industry.
Advantages
• Highly stable twin Cu without self-annealing
• Capable of conformal line/via-filling and suitable for different
RDL patterns
• Ability to plate high (111) ratio Cu layer
• Excellent throwing power
• Bright deposit
• Superior thermal shock resistance
• Excellent mechanical tensile strength and elongation
• Completely analyzable additive package by CVS
Post CMP Cleaning Solution
During the CMP process, defects and residues that may adversely affect product yield are deposited or formed, requiring removal in the subsequent post-CMP cleaning step. A water-based formulation used for post-CMP cleaning (PCMP) protects the planarized metal and dielectric, preventing metal corrosion while providing a smooth, defect-free wafer surface.
Advantages:
• High dilution design for cost-effectiveness
• Effective removal of particles on the wafer surface, achieving zero particles
• High compatibility with ULK dielectrics
• Does not contain tetramethylammonium hydroxide (TMAH)
• Effective removal of BTA and other organic substances
• Advanced barrier metal and dielectric compatibility, including cobalt (Co) and ruthenium (Ru)
• Improvement in metal static etching and reduction in surface roughness, including copper oxide barrier (COB) functionality
